Electronic packaging is a technology that provides a stable and reliable work environment for integrated circuit chips with certain function without exposure to external influence by placing them (including semiconductor integrated circuit chips, thin film integrated circuit substrate, hybrid integrated circuit chips) in a corresponding shell container, thus make the integrated circuit operating stable. Electronic packaging is also a connector and transition that combines with chip output and input, and they all come into a completed whole together with the chips. Electronic packaging material requires a certain mechanical strength, good electrical properties, thermal properties and chemical stability. Different packaging structure and materials are chosen according to the different types and conditions.

In the power electronic devices and circuit, heat dissipation is an inevitable by-product. By transferring the heat to the surrounding air, heat sink materials contributes to reducing the heat of the chip.

Molybdenum copper, tungsten copper, CMC and CMCC materials, combined with low thermal expansion rate of molybdenum, tungsten and conductivity of copper heat, can effectively release the heat of electronic device and contributes to the cooling of IGBT module, RF power amplifier, LED chips and other products. They are thus applied as a metal substrate, thermal control and heat insulation components (heat sink materials) and the lead frame in large-scale integrated circuit and high power microwave devices.

Power semiconductor package pipe

IGBT module

We can provide the products below used in power electronics devices and circuits

Heat sink

− WCu composition

− MoCu composition

− CMC，CMCC

− Mo dis

Electronic packaging

− AlSiC

− AlSi

Advantage: With low porosity, specific surface is as half as domestic competitors by BET method (samples of 5 * 5 * 52 in 100pcs). With good air tightness, the products can be completely through the helium mass spectrometer leak detection test as a result of <5*10-9Pa•m3/S. There is no addition of any activation sintering elements such as iron, nickel, cobalt. It has a good thermal conductivity property and thermal expansion. The machining is accurate and the surface is smooth. The plating surface is a choice for customers.

Specification: bared, coated with nickel and gold.

Advantage: Compared with WCu composition, the MoCu compositon has the lower density. The porosity is very low. The specific surface is as half as counterparts in China by BET method. (sample 5*5*52mm in 100pcs quantity ). Because of good air tightness, it can pass the helium mass spectrometer leak detection test with result <5*10-9Pa•m3/S. It has high heat conductivity and low thermal expansion coefficient, excellent precision machining. We can provide the plating surface.

Specification: Bared and coated with Nickle, gold.

Advantage: CMCC(Cu/MoCu/Cu) and CMC(Cu/Mo/Cu) is a 3-layer-structure material. The chip is MoCu or Mo, coated with Cu. Thanks to the lower heat expansion coefficient and far better heat conductivity than WCu and MoCu, the high power electronic components to provide better alternative and help cooling high-power IGBT modules and other components

Specification: We can provide all kinds of products with different thickness and layers to meet customers various requirements.

Typical properties table of heat sink products

Advantage: our molybdenum electric piece has excellent thermal conductivity and electrical conductivity, high thermal expansion coefficient and substrate match, so it can provide customers with bare chip and coating products. Products are widely used in electric power semiconductor devices of high power thyristor, and fast thyristor.

Specification: circular molybdenum electric piece: thickness: 0.05 ~ 7.0 mm; Diameter: 2.5 ~ 15 mm

Advantage: (IGBT AlSiC) aluminum silicon carbide substrate is indispensable parts on high-speed rail. The composite material of Aluminum silicon carbide is the aluminum silicon carbide ceramic and metal compound and then into new materials, with all the excellent quality of ceramic and metal. It has thermal conductivity, low thermal expansion coefficient and good stiffness, light quality, so it is the ideal power electronic substrate material and substrate material. With the electronic chip, it can realize good match after welding. IGBT products by Aluminum silicon carbide substrate encapsulation are widely used in high-speed rail, subway, and new energy cars, wind power, welding robot, etc.

Advantage: In microwave power device, it is mainly used for electronic packaging, integrated power module, the power electronic devices such as T/R module. Using silicon aluminum alloy as base of electronic packaging materials, shell, the box body, cover plate are a good match. It can provide a better heat dissipation, can greatly prolong the service life of encapsulated power module, increase the reliability. Density of the material has light weight (2.4 2.7 g/cm3), high thermal conductivity, low thermal expansion coefficient, high stiffness, easy for machining, surface plating performance and good welding performance, good material density, high temperature resistance, corrosion resistance, etc.

➢ Company qualified with ISO9001、14001and OHSAS18001 and can deliver the high quality products.

➢ Cooperate with famous companies home and abroad.

➢ From powder to finished products, the whole production is done in house.

➢ State-of-art inspection devices help to gurantee stable and high quality products.