Product Series

Tantalum Target

Product Introduction

Tantalum has a melting point of 2,996°C, a density of 16.68g/cm3, and a thermal conductivity (at 25°C) of 54 (W M K). Tantalum has high electrical conductivity, high thermal stability and barrier effect against foreign atoms. Therefore, sputtering coating technology is used to coat the tantalum film on integrated circuits, which prevents the diffusion of copper into the base silicon. Tantalum targets are mainly used in semiconductor and optical fields. Our tantalum targets are produced from tantalum ingots prepared by EB electron bombardment by a combination of rolling and annealing. The target produced by this technology has an excellent internal structure, as well as a uniform crystal layout, texture and energy distribution.


Product Application

Capacitors, semiconductors

Product Specifications

Diameter (50-400)mm *Thickness (3-28)mm

Brands: RO5200, RO5400, RO5252(Ta-2.5W), RO5255(Ta-10W)

Purity: >=99.95% (maximum 99.99%) Grain size: minimum 40μm

Surface roughness: Ra 0.4 max

Flatness: 0.1mm or 0.10% max

Tolerance: diameter tolerance +/- 0.254

Products of various specifications and sizes can be prepared based on specific designs to fully meet customer requirements

Fabrication Process

Company Advantage

Quality assurance: sophisticated production technology and testing methods.

Supply guarantee: sufficient raw materials, sufficient equipment capacity, and short delivery cycle.

Various product sizes can be produced to meet customization needs.

Contact Information

Wang Qun

+86-22-59213388 ext. 673

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We provide you with materials and design solutions according to your needs