Application Field
Monocrystalline Silicon Crystal Growth Furnace
Field Introduction
For single crystal silicon, polycrystalline silicon material first needs to be formed into single crystal silicon rods using the Czochralski or zone melting method. Monocrystalline silicon cells are currently a standard product in the photovoltaic market due to their advanced technology and high conversion efficiency.
The melting point of silicon is around 1,410°C. In the process of pulling a single crystal of silicon, molybdenum weights and tungsten wire rope products with sufficient strength and precise positioning are needed to provide support. In this way, it can be ensured that the crystal grows vertically upward during rotation. Moreover, a sufficiently large temperature gradient needs to be provided to increase the pulling speed of single crystals. Therefore, molybdenum shrouds can be used to condense the cooling airflow to achieve the expected cooling speed.
Advantages
■ Significant production capacity advantages to meet customers' bulk needs.
■ Products cover major crystal growth furnace equipment models and have extensive customer application performance.
■ More than 60 years experience in R&D and preparation of refractory materials, with broad experience in material selection and preparation processes.
■ Can provide product design upgrade and development, keeping up with the upgrading requirements of mainstream crystal growth furnace equipment.
Address:Area C, AT&M, No. 10 North Yongcheng Road, Yongfeng Industrial Base, Haidian District, Beijing, China / No. 10 Baozhong Road, Baodi Economic and Development Zone, Tianjin, China
Tel: +86 (0)10 5871-7301 / +86 (0)22 5921-3388
International Trade: +86 18892203868 / anne@attl.cn
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