Application Field

Sapphire Crystal Growth Furnace

Field Introduction

Sapphire crystals are the most basic single crystal form of aluminum oxide (Al2O3). They offer a series of outstanding physical and chemical properties such as high strength, good hardness, high temperature resistance, friction resistance, corrosion resistance, good light transmission performance, and excellent electrical insulation. Sapphires are used in a wide variety of demanding fields such as national defense, scientific research, and civil industry. Especially in recent years, the demand for civilian products, represented by LED lighting, Mini/Micro-LED display substrates, consumer electronics touch screens and windows, has increased significantly, bringing unprecedented business opportunities to the sapphire crystal growth industry.

Due to the high melting point of sapphire, a high-temperature furnace over 2,100°C is required for crystal growth.

Common crystal growth methods include:

● Soaking method (KY method)

● Temperature gradient method (TGT method)

● Guided mode method (EFG method)

● Heat exchange method (HEM method)

● Horizontal directional crystallization method (HDC method)

Among these methods, the most common are KY,HEM and EFG. In all of these methods, tungsten and molybdenum materials are used as heating bodies, metal reflective insulation screens, containers and other high-temperature components to meet the needs of crystal growth processes above 2,100°C.

Metal tungsten (melting point 3,420°C) and molybdenum (melting point 2,610°C) materials are widely used to produce components in the thermal field of sapphire crystal growth furnaces due to their high temperature resistance, low pollution, and high temperature creep resistance.








■    More than 60 years experience in the manufacturing of refractory metals.
■    Diversified means of quality inspection and measurement.
■    Sophisticated product process control.
■    Significant production capacity advantages to meet customers' bulk needs.